US Patent Issued to The Regents of The University of Michigan, The Government of the United States of America as Represented by the Secretary of the Navy on Jan. 20 for "Doped aluminum-alloyed gallium oxide and ohmic contacts" (Michigan, Missouri, Virginia Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,530, issued on Jan. 20, was assigned to The Regents of The University of Michigan (Ann Arbor, Mich.) and The Government of the United States of America as Represented by the Secretary of the Navy (Arlington, Va.).

"Doped aluminum-alloyed gallium oxide and ohmic contacts" was invented by Rebecca L. Peterson (Ann Arbor, Mich.), Ming-Hsun Lee (Ann Arbor, Mich.), Alan G. Jacobs (Rockville, Mo.) and Marko J. Tadjer (Vienna, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for controlling a concentration of donors in an Al-alloyed gallium oxide crystal structure includes implanting a Group IV element as a donor impurity into the crystal structu...