US Patent Issued to The Regents of the University of California on Sept. 16 for "Method for flattening a surface on an epitaxial lateral growth layer" (California Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,913, issued on Sept. 16, was assigned to The Regents of the University of California (Oakland, Calif.).

"Method for flattening a surface on an epitaxial lateral growth layer" was invented by Takeshi Kamikawa (Santa Barbara, Calif.) and Srinivas Gandrothula (Santa Barbara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for flattening a surface on an epitaxial lateral overgrowth (ELO) layer, resulting in obtaining a smooth surface with island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers are formed by stopping the growth of the ELO layers before they coalesce to each other. Then, a growth rest...