US Patent Issued to The Regents of the University of California on Oct. 7 for "Strain engineering and epitaxial stabilization of halide perovskites" (California Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,442, issued on Oct. 7, was assigned to The Regents of the University of California (Oakland, Calif.).

"Strain engineering and epitaxial stabilization of halide perovskites" was invented by Sheng Xu (La Jolla, Calif.), Yimu Chen (La Jolla, Calif.) and Yusheng Lei (La Jolla, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate...