US Patent Issued to The Regents of the University of California on June 3 for "Field-effect bipolar transistor" (California Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,172, issued on June 3, was assigned to The Regents of the University of California (Oakland, Calif.).

"Field-effect bipolar transistor" was invented by Mohammad-Hadi Sohrabi (Davis, Calif.), Liu Xiaoguang (Davis, Calif.), Omeed Momeni (Davis, Calif.) and Mohamadali Malakoutian (Davis, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed embodiments relate to the design of a new type of transistor called a "field-effect bipolar transistor" (FEBT). This FEBT includes a substrate, which comprises a body of the FEBT. It also includes a source comprising an N+ doped region of the substrate, and a drain comprising a P+ doped region of the su...