US Patent Issued to The Regents of the University of California on July 15 for "Hybrid transistor and memory cell" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,914, issued on July 15, was assigned to The Regents of the University of California (Oakland, Calif.).

"Hybrid transistor and memory cell" was invented by Kaustav Banerjee (Goleta, Calif.), Chao-Hui Yeh (Goleta, Calif.), Wei Cao (Goleta, Calif.) and Arnab Pal (Goleta, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A hybrid switch and memory cell includes a transistor device that has an atomically-thin semiconductor material channel, source/drain electrodes, and gate dielectric. The cell includes a resistive-random-access-memory having a thin conductive edge and a 2D insulator layer over the thin conductive edge, wherein the 2D insulator layer...