US Patent Issued to The Regents of the University of California, Merck Patent, SAMSUNG ELECTRONICS on Dec. 16 for "Method of forming low-resistivity Ru ALD through a bi-layer process and related structures" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,497,694, issued on Dec. 16, was assigned to The Regents of the University of California (Oakland, Calif.), Merck Patent GmbH (Darmstadt, Germany) and SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of forming low-resistivity Ru ALD through a bi-layer process and related structures" was invented by Andrew Kummel (San Diego), Michael Breeden (La Jolla, Calif.), Victor Wang (Whittier, Calif.), Ravindra Kanjolia (North Andover, Mass.), Mansour Moinpour (San Jose, Calif.) and Harsono Simka (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) lay...