US Patent Issued to The Regents of the University of California, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST) on Nov. 11 for "Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices" (Saudi Arabia, American Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,410, issued on Nov. 11, was assigned to The Regents of the University of California (Oakland, Calif.) and KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST) (Riyadh, Saudi Arabia).

"Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices" was invented by Abdullah Ibrahim Alhassan (Riyadh, Saudi Arabia), Ahmed Alyamani (Riyadh, Saudi Arabia), Abdulrahman Albadri (Riyadh, Saudi Arabia), James S. Speck (Santa Barbara, Calif.) and Steven P. DenBaars (Goleta, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a g...