US Patent Issued to THE REGENTS OF THE UNIVERSITY OF CALIFORIA on Feb. 10 for "Method to improve performances of tunnel junctions grown by metal organic chemical vapor deposition" (Florida, California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,481, issued on Feb. 10, was assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORIA (Oakland, Calif.).

"Method to improve performances of tunnel junctions grown by metal organic chemical vapor deposition" was invented by David Hwang (Windermere, Fla.), Matthew S. Wong (Santa Barbara, Calif.) and Shuji Nakamura (Santa Barbara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewal...