US Patent Issued to The Government of the United States of America, as represented by the Secretary of the Navy on Nov. 18 for "Selective area diffusion doping of III-N materials" (Virginia, Maryland, Tennessee Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,111, issued on Nov. 18, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlington, Va.).

"Selective area diffusion doping of III-N materials" was invented by Travis J. Anderson (Alexandria, Va.), Mona A. Ebrish (Nashville, Tenn.), Alan G. Jacobs (Rockville, Md.), Karl D. Hobart (Alexandria, Va.) and Francis J. Kub (Arnold, Md.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A technique for selective-area diffusion doping of III-N epitaxial material layers and for fabricating power device structures utilizing this technique. Dopant species such as Mg are introduced into the III-N material la...