US Patent Issued to The Government of the United States of America, as represented by the Secretary of the Navy on March 4 for "Polarization-engineered heterogeneous semiconductor heterostructures" (Virginia, South Carolina, California, Georgia Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,916, issued on March 4, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlington, Va.).

"Polarization-engineered heterogeneous semiconductor heterostructures" was invented by Karl D. Hobart (Alexandria, Va.), Marko J. Tadjer (Vienna, Va.), Michael A. Mastro (Fairfax, Va.), Mark Goorsky (Valencia, Calif.), Asif Khan (Columbia, S.C.) and Samuel Graham Jr. (Lithonia, Ga.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly b...