US Patent Issued to The Board of Trustees of the University of Illinois on Sept. 9 for "Large area synthesis of cubic phase gallium nitride on silicon" (Illinois Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,751, issued on Sept. 9, was assigned to The Board of Trustees of the University of Illinois (Urbana, Ill.).

"Large area synthesis of cubic phase gallium nitride on silicon" was invented by Can Bayram (Champaign, Ill.), Muhammad Ali Johar (Urbana, Ill.) and Jae Kwon Lee (Champaign, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer includes a buried substrate; a first layer of silicon (100) disposed on the buried substrate that includes silicon sidewalls (111) at an angle to the buried substrate and that form a bottom of each of multiple U-shaped grooves; a second layer of patterned oxide disposed on the silicon (100) that provides vertical...