US Patent Issued to The Board of Trustees of the Leland Stanford Junior University on Sept. 9 for "Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing" (California Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,744, issued on Sept. 9, was assigned to The Board of Trustees of the Leland Stanford Junior University (Stanford, Calif.).

"Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing" was invented by Srabanti Chowdhury (San Ramon, Calif.) and Dong Ji (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain examples, methods and semiconductor structures are directed to use of a doped buried region (e.g., Mg-dopant) including a III-Nitride material and having a diffusion path ("ion diffusion path") that includes hydrogen introduced by using ion implantation via at least one ion...