US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Semiconductor structure having a silicon active layer formed over a SiGe etch stop layer and an insulating layer with a through silicon via (TSV) passed therethrough" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,661, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having a silicon active layer formed over a SiGe etch stop layer and an insulating layer with a through silicon via (TSV) passed therethrough" was invented by Yu-Hung Cheng (Tainan, Taiwan), Shih-Pei Chou (Tainan, Taiwan), Yeur-Luen Tu (Taichung, Taiwan), Alexander Kalnitsky (San Francisco), Tung-I Lin (Tainan, Taiwan) and Wei-Li Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure, including: a semiconductor device layer including a first surface ...