US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Chemical mechanical polishing slurry composition and method of polishing metal layer" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,441,912, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Chemical mechanical polishing slurry composition and method of polishing metal layer" was invented by Chun-Hung Liao (Taichung, Taiwan), An-Hsuan Lee (Hsinchu, Taiwan), Shen-Nan Lee (Hsinchu County, Taiwan), Teng-Chun Tsai (Hsinchu, Taiwan), Chen-Hao Wu (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0....