US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "In situ and tunable deposition of a film" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,307, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"In situ and tunable deposition of a film" was invented by Chia-Hsi Wang (Changhua County, Taiwan), Yen-Yu Chen (Taichung, Taiwan) and Jen-Hao Chien (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining paramet...