US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Isolation structure for metal interconnect" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,486, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structure for metal interconnect" was invented by Lin-Yu Huang (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method for forming an interconnect structure. The method can include forming a first layer of insulating material on a substrate, forming a via recess within the layer of insulating material, filling...