US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Amorphous bottom electrode structure for MIM capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,014, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Amorphous bottom electrode structure for MIM capacitors" was invented by Hsing-Lien Lin (Hsin-Chu, Taiwan), Jui-Lin Chu (Hsinchu, Taiwan) and Cheng-Yuan Tsai (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an amorphous bottom electrode structure (BES) for a metal-insulator-metal (MIM) capacitor. The MIM capacitor comprises a bottom electrode, an insulator layer overlying the bottom electrode, and a top electrode overlying the insulator layer. The bottom electrode co...