ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,720, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method thereof" was invented by Zheng-Yong Liang (Hsinchu, Taiwan), Wei-Ting Yeh (Hsinchu, Taiwan), Yu-Yun Peng (Hsinchu, Taiwan) and Keng-Chu Lin (Ping-Tung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a first nitride-containing layer on a side of a carrier substrate, first semiconductor devices thermally coupled to the first nitride-containing layer, a first interconnect structure physi...