US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Semiconductor device and formation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,374, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and formation method thereof" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Shan-Mei Liao (Hsinchu, Taiwan), Kuo-Feng Yu (Hsinchu County, Taiwan), Da-Yuan Lee (Hsinchu County, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a fin over a substrate, the fin comprising alternately stacking first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form s...