ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,721, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Inter-wire cavity for low capacitance" was invented by Hsiu-Wen Hsueh (Taichung, Taiwan), Jiing-Feng Yang (Zhubei, Taiwan), Chii-Ping Chen (Hsinchu, Taiwan), Po-Hsiang Huang (Taipei, Taiwan), Chang-Wen Chen (Hsin-Chu, Taiwan) and Cai-Ling Wu (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated circuit (IC) in which cavities separate wires of an interconnect structure. For example, a conductive feature overlies a substrate, and an intermetal dielectric (IMD...