US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on March 18 for "Method of back end of line via to metal line margin improvement" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,134, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Method of back end of line via to metal line margin improvement" was invented by Yi-Chun Huang (Hsinchu, Taiwan), I-Chih Chen (Hsinchu, Taiwan) and Chun-Wei Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes forming a plurality of lower level conductive lines in a first dielectric layer. The plurality of lower level conductive lines includes a first lower level conductive line. The method further includes recessing portions ...