US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NAIONAL TAIWAN UNIVERSITY on July 1 for "Fin field effect transistors (FINFET) device including a plurality of recessed regions alternating with unrecessed regions in channel stack" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,425, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NAIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Fin field effect transistors (FINFET) device including a plurality of recessed regions alternating with unrecessed regions in channel stack" was invented by Hung-Yu Ye (Taichung, Taiwan), Yu-Shiang Huang (New Taipei, Taiwan), Chien-Te Tu (Hsinchu, Taiwan) and Chee-Wee Liu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first channel structure, a second channel structure, and a gate structure. The first channel structure connects a first source region and a first drain ...