US Patent Issued to TAIWAN SEMICONDUCTIR MANUFACTURING on Sept. 9 for "Fabrication of field effect transistors with ferroelectric materials" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,318, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTIR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Fabrication of field effect transistors with ferroelectric materials" was invented by Cheng-Ming Lin (Kaohsiung, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Chi On Chui (Hsinchu, Taiwan), Ziwei Fang (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes gate spacers disposed over a semiconductor layer, a hafnium-containing dielectric layer, where a first portion of the hafnium-containing dielectric layer having a first thickness is disposed over the semiconduct...