US Patent Issued to SUZHOU UKING SEMICONDUCTOR TECHNOLOGY on Sept. 2 for "Apparatus for synchronous growth of silicon carbide crystals in multiple independent crucibles arranged linearly" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,404,602, issued on Sept. 2, was assigned to SUZHOU UKING SEMICONDUCTOR TECHNOLOGY Co. Ltd. (Suzhou, China).

"Apparatus for synchronous growth of silicon carbide crystals in multiple independent crucibles arranged linearly" was invented by Jianming Chen (Suzhou, China), Yuanhui Zhou (Suzhou, China) and Hongyu Yang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method and apparatus for synchronous growth of silicon carbide crystals in multiple crucibles comprising a chamber and an insulation layer assembly arranged close to inner walls of the chamber wherein the insulation layer assembly is used to divide...