ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,508,532, issued on Dec. 30, was assigned to SOUTHWEST INSTITUTE OF CHEMICAL Co. LTD (Sichuan, China).

"Method for purification of high-purity or ultrahigh-purity gas by low temperature adsorption" was invented by Jian Chen (Sichuan, China), Xu Li (Sichuan, China), Yupeng Tao (Sichuan, China), Jian Wang (Sichuan, China), Hongyu Zhang (Sichuan, China), Jianfeng Zhang (Sichuan, China), Yun Yang (Sichuan, China), Yi Wu (Sichuan, China) and Jiangtao Pu (Sichuan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for purification of high-purity or ultrahigh-purity gas by low temperature adsorption, has the following steps: adsorbing and removing im...