US Patent Issued to SOUTH CHINA UNIVERSITY OF TECHNOLOGY on Jan. 20 for "Epitaxial structure of nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,566, issued on Jan. 20, was assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY (Guangzhou, China).

"Epitaxial structure of nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and preparation method thereof" was invented by Wenliang Wang (Guangzhou, China), Jianhua Duan (Guangzhou, China) and Guoqiang Li (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure of a nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and a preparation method thereof are provided. The epitaxial structure of the nonpolar AlGaN-based DUV photoelectric detector includes a nonpolar AlN buffer layer, a nonpolar Al0....