US Patent Issued to Soitec on Sept. 23 for "Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate" (French Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,622, issued on Sept. 23, was assigned to Soitec (Bernin, France).

"Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate" was invented by Bruno Ghyselen (Seyssinet, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed ...