US Patent Issued to Soitec on Sept. 23 for "Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT" (French Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,507, issued on Sept. 23, was assigned to Soitec (France).

"Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT" was invented by Bruno Ghyselen (Seyssinet, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material." ...