ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,484, issued on July 1, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.) and The Regents of the University of California (Oakland, Calif.).

"Memory device of non-volatile memory cells" was invented by Hieu Van Tran (San Jose, Calif.), Nhan Do (Saratoga, Calif.), Farnood Merrikh Bayat (Goleta, Calif.), Xinjie Guo (Goleta, Calif.), Dmitri Strukov (Goleta, Calif.), Vipin Tiwari (Dublin, Calif.) and Mark Reiten (Alamo, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a non-volatile memory cells, source regions and drain regions arranged in rows and columns. Respective ones of the columns of drain regions inc...