US Patent Issued to Silanna UV Technologies on March 11 for "Methods and material deposition systems for forming semiconductor layers" (Australian Inventor)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,506, issued on March 11, was assigned to Silanna UV Technologies Pte Ltd (Singapore).

"Methods and material deposition systems for forming semiconductor layers" was invented by Petar Atanackovic (Henley Beach South, Australia).

According to the abstract* released by the U.S. Patent & Trademark Office: "In embodiments, methods of configuring a molecular beam epitaxy system include providing a rotation mechanism configured to rotate a substrate deposition plane of a substrate around a center axis of the substrate deposition plane. A positioning mechanism is provided, being configured to allow the substrate deposition plane and an exit aperture of at least one material source in a ...