ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,378,690, issued on Aug. 5, was assigned to Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences (Shanghai) and Chongqing University (Chongqing, China).

"Method for growing long-seed DKDP crystal by two-dimensional motion" was invented by Duanyang Chen (Shanghai), Mingwei Li (Shanghai), Hongji Qi (Shanghai), Jianda Shao (Shanghai), Bin Wang (Shanghai), Hang Liu (Chongqing, China), Huawei Yin (Chongqing, China) and Chuan Zhou (Chongqing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-c...