US Patent Issued to SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES on Nov. 18 for "Preparation method of high-thermal-conductivity and net-size silicon nitride ceramic substrate" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,473,235, issued on Nov. 18, was assigned to SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES (Shanghai).

"Preparation method of high-thermal-conductivity and net-size silicon nitride ceramic substrate" was invented by Hui Zhang (Shanghai), Xuejian Liu (Shanghai), Jindi Jiang (Shanghai), Xiumin Yao (Shanghai), Zhengren Huang (Shanghai) and Zhongming Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method of a high-thermal-conductivity and net-size silicon nitride ceramic substrate includes the following steps: (1) mixing an original powder, a sintering aid, a dispersant, a defoamer, a binder, and a plasticizer in a p...