US Patent Issued to Shanghai Huali Integrated Circuit on Dec. 23 for "Failure analysis and location method for short circuit structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,039, issued on Dec. 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Failure analysis and location method for short circuit structure" was invented by Lingye Yang (Shanghai) and Jinde Gao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a failure analysis and location method for a short circuit structure. a first layer metal wire structure and a second layer metal wire structure located above the first layer metal wire structure, the first and second layer metal wire structures are connected by a first layer metal via located between the first and second layer metal wire structures; a ...