ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,889, issued on Dec. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Methods to improve current consumption and read time in successive reads" was invented by Abhijith Prakash (Milpitas, Calif.) and Xiang Yang (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus includes memory cells each connected to word lines and configured to store a threshold voltage corresponding to data states. The memory apparatus also includes a control means configured to apply at least one read voltage associated with one of the data states to ones of the word lines connected to the memory cells being read in one read op...