US Patent Issued to SAMSUNG ELECTRONICS on Sept. 30 for "Integrated circuit device including N-channel metal-oxide semiconductor (NMOS) transistor region and a P-channel metal-oxide semiconductor (PMOS) transistor region" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,017, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit device including N-channel metal-oxide semiconductor (NMOS) transistor region and a P-channel metal-oxide semiconductor (PMOS) transistor region" was invented by Junggil Yang (Hwaseong-si, South Korea), Minju Kim (Hwaseong-si, South Korea) and Donghyi Koh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device including a substrate including first and second device regions; a first fin active region on the first device region; a second fin active region on the second device region; an isolatio...