US Patent Issued to SAMSUNG ELECTRONICS on Dec. 9 for "Memory device including string select transistors having different threshold voltages and method of operating the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,257, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including string select transistors having different threshold voltages and method of operating the memory device" was invented by Yohan Lee (Suwon-si, South Korea), Jaeduk Yu (Suwon-si, South Korea) and Sangsoo Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including: a memory cell array including a plurality of memory blocks; a voltage generator configured to generate an erase voltage and row line voltages to be provided to a target block of the plurality of memory blocks on which an erase operation...