US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Method of manufacturing metal nitride film and electronic device including metal nitride film" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,919, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method of manufacturing metal nitride film and electronic device including metal nitride film" was invented by Jeonggyu Song (Seongnam-si, South Korea), Kyooho Jung (Seoul, South Korea), Younsoo Kim (Yongin-si, South Korea), Haeryong Kim (Seongnam-si, South Korea) and Jooho Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor includes: a lower electrode including a metal nitride represented by MM'N, wherein M is a metal element, M' is an element different from M, and N is nitrogen; a dielectric layer on the lower elec...