US Patent Issued to SAMSUNG ELECTRONICS, UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) on Nov. 18 for "Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,473,662, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) (Ulsan, South Korea).

"Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film" was invented by Taejin Choi (Suwon-si, South Korea), Minsu Kim (Ulsan, South Korea), Hyeonsuk Shin (Ulsan, South Korea) and Hyeonjin Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric cons...