US Patent Issued to Raytheon on April 15 for "Epitaxial growth of aluminum on aluminum-nitride compounds" (Massachusetts, New Hampshire Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,606, issued on April 15, was assigned to Raytheon Co. (Arlington, Va.).

"Epitaxial growth of aluminum on aluminum-nitride compounds" was invented by John Andrew Logan (Lawrence, Mass.), Brian Douglas Schultz (Lexington, Mass.) and Theodore D. Kennedy (Derry, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the c...