US Patent Issued to NXP USA on July 1 for "Termination ballast to suppress hotspot formation in trench field plate power MOSFETs" (American, French Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,436, issued on July 1, was assigned to NXP USA Inc. (Austin, Texas).

"Termination ballast to suppress hotspot formation in trench field plate power MOSFETs" was invented by Tanuj Saxena (Chandler, Ariz.), Christian Torrent (Montauban, France), Vishnu Khemka (Chandler, Ariz.), Ganming Qin (Chandler, Ariz.) and Moaniss Zitouni (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high voltage trench field plate power MOSFET device is fabricated in a substrate having first and second trenches separated from one another by a narrow epitaxial semiconductor drift pillar structure, where insulated gate electrode layers and insulated field plate l...