US Patent Issued to NXP USA on Dec. 30 for "Power amplifier device having vertical die interconnect structure" (Arizona, Illinois Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,793, issued on Dec. 30, was assigned to NXP USA INC. (Austin, Texas).

"Power amplifier device having vertical die interconnect structure" was invented by Kevin Kim (Chandler, Ariz.), Vikas Shilimkar (Chandler, Ariz.) and Joseph Gerard Schultz (Wheaton, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power amplifier device includes a transistor die with an elongated bondpad coupled to a terminal of an integrated transistor. The device also includes a substrate formed from a stack of alternating dielectric and patterned conductive layers. An elongated die contact is exposed at a first substrate surface and is attached to the elongated bondpad to...