US Patent Issued to NORTHWESTERN UNIVERSITY, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS on Sept. 2 for "Tunable gaussian heterojunction transistors, fabricating methods and applications of same" (Illinois, Idaho Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,179, issued on Sept. 2, was assigned to NORTHWESTERN UNIVERSITY (Evanston, Ill.) and THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (Urbana, Ill.).

"Tunable gaussian heterojunction transistors, fabricating methods and applications of same" was invented by Mark C. Hersam (Wilmette, Ill.), Megan E. Beck (St. Maries, Idaho), Vinod K. Sangwan (Evanston, Ill.), Amit R. Trivedi (Oak Park, Ill.) and Ahish Shylendra (Chicago).

According to the abstract* released by the U.S. Patent & Trademark Office: "A GHeT includes a bottom gate formed on a substrate; a first dielectric layer (DL) formed on the bottom gate; a monolayer film formed of an atomically thin material on the first DL; a ...