US Patent Issued to NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY on July 22 for "AlN crystal preparation method, AlN crystals, and organic compound including AlN crystals" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,823, issued on July 22, was assigned to NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY (Nagoya, Japan).

"AlN crystal preparation method, AlN crystals, and organic compound including AlN crystals" was invented by Toru Ujihara (Nagoya, Japan), Yukihisa Takeuchi (Nagoya, Japan), Mingyu Chen (Nagoya, Japan) and Masashi Nagaya (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that ...