US Patent Issued to NATIONAL RESEARCH COUNCIL OF CANADA on Oct. 28 for "Monolithic integration of enhancement-mode and depletion-mode galium nitride high electron mobility transistors" (Canadian Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,761, issued on Oct. 28, was assigned to NATIONAL RESEARCH COUNCIL OF CANADA (Ottawa).

"Monolithic integration of enhancement-mode and depletion-mode galium nitride high electron mobility transistors" was invented by Elias Al Alam (Gloucester, Canada) and Alireza Loghmany (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device and method of fabricating a device having depletion-mode and enhancement-mode high-electron-mobility transistors (HEMTs) on a single wafer are disclosed. The method of fabrication involves providing semiconductor layers capable of sustaining a two-dimensional electron sheet to enable electrical current to flow t...