US Patent Issued to Mitsubishi Electric on Sept. 16 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,908, issued on Sept. 16, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Koji Tanaka (Tokyo), Yuji Sato (Tokyo), Yoshihisa Uchida (Tokyo) and Shotaro Nakamura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal layer provided above the semiconductor substrate, a second metal layer provided above the first metal layer and containing Ni as a material and a third metal layer provided above the second metal layer and containing Cu or Ni as a material, ...