US Patent Issued to Mitsubishi Electric on July 22 for "Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or less" (Japanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,350, issued on July 22, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or less" was invented by Kenichi Hamano (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present disclosure is to achieve a stable current sensing operation and suppress decrease in main current at a low temperature of 0deg C. or less in a silicon carbide semiconductor device. An SiC-MOSFET includes: a main cel...