US Patent Issued to Micron Technology on July 8 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,619, issued on July 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Collin Howder (Boise, Idaho) and John D. Hopkins (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above conductor material of a conductor tier. Channel-material-string constructions extend through the insulative and co...