US Patent Issued to Massachusetts Institute of Technology, The Government of the United States of America, as Represented by the Secretary of the Navy, ROHM on Nov. 11 for "Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,699, issued on Nov. 11, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.), The Government of the United States of America, as Represented by the Secretary of the Navy (Arlington, Va.) and ROHM Co. Ltd. (Kyoto, Japan).

"Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles" was invented by Rachael L. Myers-Ward (Arlington, Va.), Jeehwan Kim (Cambridge, Mass.), Kuan Qiao (Cambridge, Mass.), Wei Kong (Cambridge, Mass.), David Kurt Gaskill (Alexandria, Va.), Takuji Maekawa (Kyoto, Japan) and Noriyuki Masago (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Tr...