US Patent Issued to MARVELL ASIA on Jan. 13 for "Method of fabricating Si photonics chip with integrated high speed Ge photo detector working for entire C- and L-band" (Canadian, American Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,095, issued on Jan. 13, was assigned to MARVELL ASIA PTE LTD (Singapore).

"Method of fabricating Si photonics chip with integrated high speed Ge photo detector working for entire C- and L-band" was invented by Liang Ding (Arcadia, Canada), Masaki Kato (Palo Alto, Calif.) and Radhakrishnan Nagarajan (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A receiver for receiving optical signals transmitted over a communications network includes a silicon photonics substrate including multiple regions with respectively different doping, an epitaxial germanium layer extending at least partially over at least two or more of regions with diff...