ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,007, issued on July 22, was assigned to LumiGNtech Co. Ltd. (Gyeonggi-do, South Korea).
"Method of depositing Ga 2 O 3 crystal film according to hydride vapor phase epitaxy by supplying GaCl gas, oxygen, and HCl gas" was invented by Hae Yong Lee (Gwangmyeong-si, South Korea), Young Jun Choi (Seoul, South Korea) and Hae Gon Oh (Gwangmyeong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a Ga2O3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga2O3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga2O3 crystal film dep...